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| br93g76 -3b datasheet product structure silicon monolithic integrated circuit this pr oduct is not designed prot ection against radioactive rays 1/36 www.rohm.com tsz0220 1-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 r ohm co., ltd. all rights reserved. tsz22111 ? 14 ? 001 serial eeprom series s tandard eeprom microw ire bus eeprom (3-wire) br93g76-3b general description br93g76-3b is serial eeprom of serial 3-line interface method. they are 16bit organization and cs pin is the third pin in thei r pin configuration. features 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) operations available at high speed 3mhz clock (4.5v ~ 5.5v) high speed write available (write time 5ms max. same package and pin configuration from 1kbit to 16kbit 1.7~5.5v single power source operation address auto increment function at read operation write mistake prevention function ? write prohibition at power on ? write prohibition by command code ? write mistake prevention function at low voltage self-timed programming cycle program condition display by ready / busy compact package sop8/sop-j8/ssop-b8/tssop-b8/msop8/ tssop-b8j/dip-t8/vson008x2030 more than 40 years data retention more than 1 million write cycles initial delivery state all addresses ffffh packages w(typ.) x d(typ.)x h(max.) cap acity bit format type power source voltage di p-t8 *1 sop8 sop-j8 ssop-b8 tssop-b8 tssop-b8j msop8 vson008 x2030 8kbit 51216 br93g76-3b 1.7 ~ 5.5v *1 dip-t8 is not halogen free package sop8 5.00mm x 6.20mm x 1.71mm sop- j8 4.90mm x 6.00mm x 1.65mm v son008 x 20 30 2.00mm x 3.00mm x 0.60mm tssop-b8 3.00mm x 6.40mm x 1.20mm dip-t8 9.30mm x 6.50mm x 7.10mm tssop-b8j 3.00mm x 4.90mm x 1.10mm msop8 2.90mm x 4.00mm x 0.90mm ssop-b8 3.00mm x 6.40mm x 1.35mm downloaded from: http:///
2/36 datasheet datasheet br93g76- 3b www .rohm.com tsz0220 1-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 r ohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 a bsolute maximum ratings parameter symbol ratings unit remarks supp ly voltage vcc -0.3 to +6.5 v pe rmissible dissipation pd 800 (dip-t8) mw when using at ta=25 or higher 8.0mw to be reduced per 1 . 450 (sop8) when using at ta=25 or higher 4.5mw to be reduced per 1 . 450 (sop-j8) w hen using at ta=25 or higher 4.5mw to be reduced per 1 . 300 (ssop-b8 ) when using at ta=25 or higher 3.0mw to be reduced per 1 . 330 (t ssop-b8) w hen using at ta=25 or higher 3.3mw to be reduced per 1 . 310 (t ssop-b8j) w hen using at ta=25 or higher 3.1mw to be reduced per 1 . 310 (msop8) when using at ta=25 or higher 3.1mw to be reduced per 1 . 30 0 (vson008x2030) w hen using at ta=25 or higher 3.0mw to be reduced per 1 . s torage temperature ts t g 65 to +150 operatin g temperature topr 40 to +85 input volt age/ output voltage \ -0.3 to vcc+1.0 v the max value of lnput voltage/output voltage is not over 6.5v. when the pulse width is 50ns or less, the min value of input voltage/output voltage is not under -0.8v. junctio n temperature tjmax 150 jun ction temperature at the storage condition memo ry cell characteristics (vcc=1.7 5.5v) parameter limit unit condition min. t yp. max. w rite cycles *1 1,000,0 00 - - times ta=25 dat a retention *1 40 - - years ta=25 shipment da ta all address ffffh *1 not 100% tested reco mmended operation ratings parameter symbol limits unit supp ly voltage vcc 1.7~5.5 v input volt age v in 0~ vcc downloaded from: http:/// 3/36 datasheet datasheet br93g76- 3b www .rohm.com tsz0220 1-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 r ohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 dc ch aracteristics (unless otherwise specified, vcc=1.7 5.5v, ta=-40 +85 ) parameter symb ol limits unit condition min. t yp. max. input lo w voltage v il -0.3 *1 - 0.3vcc v 1.7v vcc 5.5v input hig h voltage v ih 0.7vcc - vcc+1.0 v 1.7v vcc 5.5v output lo w voltage 1 v ol1 0 - 0.4 v i ol =2.1ma, 2.7 v vcc 5.5v output lo w voltage 2 v ol2 0 - 0.2 v i ol = 100 a output hig h voltage 1 v oh1 2.4 - vcc v i oh = -0.4ma, 2.7v vcc 5.5v output hig h voltage 2 v oh2 vcc-0.2 - vcc v i oh = -100 a input leak age current1 i li1 -1 - +1 a v in =0v~vcc(cs,sk,di) output leak age current i lo -1 - +1 a v out =0v~vcc, cs=0v supp ly current i cc1 - - 1.0 ma vcc=1.7v, f sk =1mhz, t e/w =5 ms (write) - - 2.0 ma vcc=5.5v ,f sk =3mhz, t e/ w =5 ms (write) i cc2 - - 0.5 ma f sk =1mhz (read) - - 1.0 ma f sk =3mhz (read) i cc3 - - 2.0 ma vcc=2.5v, f sk =1 mhz t e/w =5ms ( wral, eral) - - 3.0 ma vcc=5.5v ,f sk =3 mhz t e/w =5ms ( wral, eral) s tandby current i sb1 - - 2.0 a cs=0v *1 when the pulse width is 50ns or less, the min value of v il i s admissible to -0.8v. downloaded from: http:/// 4/36 datasheet datasheet br93g76- 3b www .rohm.com tsz0220 1-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 r ohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 a c characteristics (unless otherwise specified, vcc=1.7 ~ 2.5v, ta=-40 ~ +85 ) parameter symbol limit s unit min. t yp. max. sk frequenc y f sk - - 1 mhz sk high time t skh 250 - - ns sk lo w time t skl 250 - - ns cs lo w time t cs 250 - - ns cs setup time t css 200 - - ns di setup time t dis 100 - - ns cs hol d time t csh 0 - - ns di hold time t dih 100 - - ns dat a 1 output delay t pd1 - - 400 ns dat a 0 output delay t pd0 - - 400 ns t ime from cs to output establishment t sv - - 400 ns t ime from cs to high-z t df - - 200 ns w rite cycle time t e/ w - - 5 ms (unless otherwise specified, vcc=2.5~4.5v, ta=-40~+85 ) parameter symbol limit s unit min. t yp. max. sk frequenc y f sk - - 2 mhz sk high time t skh 230 - - ns sk lo w time t skl 200 - - ns cs lo w time t cs 200 - - ns cs setup time t cs s 50 - - ns di setup time t dis 100 - - ns cs hol d time t cs h 0 - - ns di hold time t dih 100 - - ns dat a 1 output delay t pd 1 - - 200 ns dat a 0 output delay t pd 0 - - 200 ns t ime from cs to output establishment t sv - - 150 ns t ime from cs to high-z t df - - 100 ns w rite cycle time t e/ w - - 5 ms (unless otherwise specified, vcc=4.5~5.5v, ta=-40~+85 ) parameter symbol limit s unit min. t yp. max. sk frequenc y f sk - - 3 mhz sk high time t skh 100 - - ns sk lo w time t skl 100 - - ns cs lo w time t cs 200 - - ns cs setup time t cs s 50 - - ns di setup time t dis 50 - - ns cs hol d time t cs h 0 - - ns di hold time t dih 50 - - ns dat a 1 output delay t pd 1 - - 200 ns dat a 0 output delay t pd 0 - - 200 ns t ime from cs to output establishment t sv - - 150 ns t ime from cs to high-z t df - - 100 ns w rite cycle time t e/ w - - 5 ms downloaded from: http:/// 8,192 bi t 5/36 datasheet datasheet br93g76- 3b www .rohm.com tsz0220 1-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 r ohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 se rial input / output timing data is taken by di sync with the rise of sk. at read operation, data is output from do in sync with the rise of sk. the status signal at write (ready / busy) is output after t cs from the fall of cs after write command input, at the area do where cs is high, and valid until the next command start bit is input. and, while cs is low, do becomes high-z. after completion of each mode execution, set cs low once for internal circuit reset, and execute the following operation mode. 1/f sk is the sk clock cycle, even if f sk is maximum, the s k clock cycle cant be t skh (min.)+t sk l (min.) for w rite cycle time t e/ w , pleas e see figure 36,37,39,40. for cs low time t cs , please see f igure 36,37,39,40. block diagram figure 1. sync data input / output timing cs sk do(read) di do (write) t css t skh t skl t csh t dis t d ih t pd1 t pd0 t df st atus valid t sv 1/ f sk f igure 2. block diagram comman d decode control clock generation po wer source voltage detection write prohibition high v oltage occurrence command re g iste r address buffer sk di dumm y bit do dat a register r/ w amplifier 9bit 9bit 16bit 16bit eeprom cs address decoder downloaded from: http:/// 6/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 pin configuration pin descriptions figure 3. pin configuration pin name i / o function du - dont use terminal *1 vcc - supply voltage cs input chip select input sk input serial clock input di input start bit, ope code, address, and serial data input do output serial data output, ready / busy DDDDD status display output gnd - all input / output reference voltage, 0v nc - non connected terminal *1 *1 terminals not used may be set to any of high,low, and open nc gnd do di du v cc cs sk br93g76-3b :dip-t8 br93g76f-3b :sop8 br93g76fj-3b :sop-j8 br93g76fv-3b :ssop-b8 br93g76fvt-3b :tssop-b8 br93g76fvj-3b :tssop-b8j br93g76fvm-3b :msop8 br93g76nux-3b :vson008x2030 downloaded from: http:/// 7/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 typical performance curves figure 4. input high voltage v ih (cs,sk,di) figure 5. input low voltage v il (cs,sk,di) figure 6. output low voltage1 v ol1 (vcc=2.7v) figure 7. output low voltage2 v ol2 (vcc=1.7v) 0 1 2 3 4 5 6 0123456 su ppl y vol tage: vc c (v) input high voltage : v ih (v) s ta=- ta= 2 ta= 8 0 1 2 3 4 5 6 0123456 su ppl y vol tage: vc c (v) input low voltage : v il (v) s ta=- ta= 2 ta= 8 0 0.2 0.4 0.6 0.8 1 012345 output low current:i ol (ma) output low voltage1 : v ol1 (v) s ta=- ta= 2 ta= 8 0 0.2 0.4 0.6 0.8 1 012345 output low current : i ol (ma) output low voltage2 : v ol2 (v) s ta=- ta= 2 ta= 8 downloaded from: http:/// 8/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 typical performance curves \ continued figure 8. output high voltage1 v oh1 (vcc=2.7v) figure 9. output high voltage2 v oh2 (vcc=1.7v) 0 0.2 0.4 0.6 0.8 1 1.2 0123456 supply voltage: vcc(v) input leakage current1 : i li1 (ua) s ta=- ta= 2 ta= 8 figure 10. input leakage current1 i li1 (cs) figure 11. input leakage current1 i li1 (sk) 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 output high current: i oh (ma) output high voltage1 : v oh1 (v) s ta=- ta= 2 ta= 8 0 1 2 3 4 0 0.4 0.8 1.2 1.6 output high current: i oh (ma) output high voltage2 : v oh2 (v) s ta=- ta= 2 ta= 8 0 0.2 0.4 0.6 0.8 1 1.2 0123456 su ppl y vol tage: vc c (v) input leakage current1 : i li1 (ua) s ta=- ta= 2 ta= 8 downloaded from: http:/// 9/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 typical performance curves \ continued figure 12. input leakage current1 i li1 (di) figure 13. output leakage current i lo (do) figure 14. supply current (write) i cc1 (write, f sk =1mhz) figure 15. supply current (write) i cc1 (write,f sk =3mhz) 0 0.2 0.4 0.6 0.8 1 1.2 0123456 supply voltage: vcc(v) output leakage current : i lo (ua) s ta=- ta= 2 ta= 8 0 0.2 0.4 0.6 0.8 1 1.2 0123456 supply voltage: vcc(v) input leakage current1 : i li1 (ua) s ta=- ta= 2 ta= 8 0 0.5 1 1.5 2 2.5 0123456 su ppl y vol tage: vc c (v) supply current (write) : i cc1 (ma) s ta=- ta= 2 ta= 8 0 1 2 3 4 5 0123456 su ppl y vol tage: vc c (v) supply current (write) : i cc1 (ma) s ta=- ta= 2 ta= 8 downloaded from: http:/// 10/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 typical performance curves \ continued figure 16. supply current (read) i cc2 (read,f sk =1mhz). figure 17. supply current (read) i cc2 (read,f sk =3mhz) figure 18. supply current (wral) i cc3 (wral,f sk =1mhz) figure 19. supply current (wral) i cc3 (wral,f sk =3mhz) 0 0.5 1 1.5 2 2.5 0123456 su ppl y vol tage: vc c (v) supply current (read) : i cc2 (ma) s ta=- ta= 2 ta= 8 0 0.5 1 1.5 2 2.5 0123456 su ppl y vol tage: vc c (v) supply current (read) : i cc2 (ma) s ta=- ta= 2 ta= 8 0 0.5 1 1.5 2 2.5 0123456 su ppl y vol tage: vc c (v) supply current (wral) : i cc3 (ma) s ta=- ta= 2 ta= 8 0 1 2 3 4 5 0123456 su ppl y vol tage: vc c (v) supply current(wral) : i cc3 (ma) s ta=- ta= 2 ta= 8 downloaded from: http:/// 11/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 typical performance curves \ continued 0 100 200 300 400 500 0123456 su ppl y vol tage: vc c (v) sk high time : t skh (ns) s ta=- ta= 2 ta= 8 s s figure 20. standby current i sb1 (cs=0v) fi gure 21 . sk f requency f sk fi gure 2 2 . sk hi g h t i me t skh fi gure 2 3 . sk l o w t i me t skl 0.01 0.1 1 10 100 1000 0123456 supply voltage: vcc(v) sk frequency : f sk (mhz) s ta=- ta= 2 ta= 8 s s 0 100 200 300 400 500 0123456 su ppl y vol tage: vc c (v) sk low time : t skl (ns) s ta=- ta= 2 ta= 8 s s 0 0.5 1 1.5 2 2.5 0123456 su ppl y vol tage: vc c (v) standby current : i sb1 (ua) s ta=- ta= 2 ta= 8 downloaded from: http:/// 12/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 typical performance curves \ continued -300 -250 -200 -150 -100 -50 0 50 0123456 supply voltage: vcc(v) cs hold time : t csh (ns) s ta=- ta= 2 ta= 8 0 100 200 300 400 500 0123456 su ppl y vol tage: vc c (v) cs low time : t cs (ns) s ta=- ta= 2 ta= 8 s 0 50 100 150 200 250 300 0123456 supply voltage: vcc(v) cs setup time : t css (ns) s ta=- ta= 2 ta= 8 s -50 0 50 100 150 0123456 supply voltage: vcc(v) di setup time : t dis (ns) s ta=- ta= 2 ta= 8 s fi gure 2 4 . cs l o w t i me t cs fi gure 2 5. cs h o ld t i me t csh f i gure 2 6 . cs setup t i me t css fi gure 2 7. di setup t i me t dis downloaded from: http:/// 13/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 typical performance curves \ continued -50 0 50 100 150 0123456 su ppl y vol tage: vc c (v) di hold time : t dih (ns) s ta=- ta= 2 ta= 8 s 0 200 400 600 800 1000 0123456 su ppl y vol tage: vc c (v) data "0" output delay : t pd0 (ns) s ta=- ta= 2 ta= 8 s 0 100 200 300 400 500 0123456 su ppl y vol tage: vc c (v) time from cs to output establishment : t sv (ns) s ta=- ta= 2 ta= 8 s fi gure 2 8 . di h o ld t i me t dih fi gure 2 9 . d ata "0" output d e l a y t pd0 fi gure 30 . d ata "1" output d e l a y t pd1 fi gure 31 . ti me f rom cs to output esta bli s h ment t sv 0 200 400 600 800 1000 0123456 su ppl y vol tage: vc c (v) data "1" output delay : t pd1 (ns) s ta=- ta= 2 ta= 8 s downloaded from: http:/// 14/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 typical performance curves \ continued 0 50 100 150 200 250 0123456 supply voltage: vcc(v) time from cs to high-z : t df (ns) s ta=- ta= 2 ta= 8 s 0 1 2 3 4 5 6 0123456 supply voltage: vcc(v) write cycle time : t e/w (ms) s ta=- ta= 2 ta= 8 fi gure 3 2 . ti me f rom cs to hi g h - z t df fi gure 3 3 . w r i te cyc l e t i me t e/w downloaded from: http:/// 15/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 description of operations communications of the microwire bus are carried out by sk (serial clock), di (serial data input), do (serial data output) ,and cs (chip select) for device selection. when to connect one eeprom to a microcontroller, connect it as shown in figure 34(a) or figure 34(b). when to use the input and output common i/o port of the microc ontroller, connect di an d do via a resistor as show n in figure 34(b) (refer to pages 21, 22 . ), and connection by 3 lines is available. in the case of plural connections, refer to figure 34 (c). communications of the microwire bus are started by the first 1 input after the rise of cs. this input is called a start bit. after input of the start bit, input ope code, address and dat a. address and data are input all in msb first manners. 0 input after the rise of cs to the star t bit input is all ignored. therefore, when there is limitation in the bit width of p io of the microcontroller, input 0 before the star t bit input, to control the bit width. command mode command start bit ope code address data msb of data(dx) is d15 required clocks(n) br93g76-3 msb of address(am) is a9 read (read) *1 1 10 a9,a8,a7,a6,a5,a4,a3,a2,a1,a0 d15~d0(read data) br93g76-3:n=29 write enable (wen) 1 00 1 1 * * * * * * * * br93g76-3:n=13 write disable (wds) 1 00 0 0 * * * * * * * * write (write) *2 1 01 a9,a8,a7,a6,a5 ,a4,a3,a2,a1,a0 d15~d0(write data) br93g76-3:n=29 write all (wral) *2 1 00 0 1 * * * * * * * * d15~d0(write data) erase (erase) 1 11 a9,a8,a7,a6,a5,a4,a3,a2,a1,a0 br93g76-3:n=13 erase all (eral) 1 00 1 0 * * * * * * * * a9 of br93g76 becomes don't care. ? input the address and the data in msb first manners. ? as for *, input either 1 or 0 . *start bit acceptance of all the commands of this ic starts at recognition of the start bit. the start bit means the first 1 input after the rise of cs. *1 as for read, by continuous sk clock input after setting the read command, data output of the set address starts, and addres s data in significant order are sequentially output continuously. (auto increment function) *2 for write or write all commands, an internal erase or er ase all is included and no separate erase or erase all is needed before write or write all command. (a). connection by 4 lines cs sk do di cs sk di/o cs sk di do (b). connection by 3 lines cs sk di do cs3cs2 cs1 sk do di cs sk di do device 1 cs sk di do device 2 cs sk di do device 3 (c). connection exampl e of plural devices figure 34. connection method with microcontroller micro- controller br93gxx micro- controller micro- controller br93gxx downloaded from: http:/// 16/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 timing chart 1) read cycle (read) *1 start bit when data 1 is input for the first time after the rise of cs , this is recognized as a start bit. and when 1 is input after plural 0 are input, it is recognized as a start bit, and the following operation is start ed. this is common to all the commands to described hereafter. *2 for the meaning of am,d x,n,please see tables of command mode in page15. for example, am=a9,dx=d15,n=29. when the read command is recognized, input address data (16bit) is output to serial. and at that moment, at taking a0, in sync with the rise of sk, 0 (dummy bit) is output. and, the following data is output in sync with the rise of sk. this ic has an address auto increment function which is vali d only at read command. this is the function where after the above read execution, by continuously inputting sk clock, the above address data is read sequentially. and, during the auto increment, keep cs at high. 2) write cycle (write) for the meaning of am,dx,n, please se e tables of command mode in page15. in this command, input 16bit data are written to designated addr esses (am~a0). the actual write starts by the fall of cs of d0 taken sk clock. when status is not detected (cs=low fixed),make sure max 5ms time is in comforming with t e/w . when status is detected (cs=high), all commands are not accepted for areas where low (busy) is output from do, therefore, do not input any command. 3) write all cycyle (wral) for the meaning of dx,n,please see tables of command mode in page15. in this command, input 16bit data is written simultaneously to all adresses. data is not written continuously per one word but is written in bulk, the write time is only max. 5ms in conformity with t e/w . in wral, status can be detected in the same manner as in write command. cs 1 2 1 4 high-z 1 am a1 a0 0 dx dx-1 d1 dx dx-1 *1 *2 d0 sk di do 0 n n+1 *2 cs 1 2 1 4 high-z 0 a m a 1 a 0 dx dx-1 d1 d0 sk di do 1 n status t cs t sv busy t e/w ready cs 1 2 1 5 high-z 0 0 0 dx dx-1 d1 d0 sk di do n status t cs t sv busy t e/w ready 1 fi gure 35. read cycle figure 36. write cycle figure 37. write all cycle am: msb of address dx: msb of data n: required clocks am: msb of address dx: msb of data n: required clocks dx: msb of data n: required clocks downloaded from: http:/// 17/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 4) write enable (wen) / disable (wds) cycle for the meaning of n,please see tables of command mode in page15. at power on, this ic is in write disable status by the internal reset circuit. before executing the write command, it is necessary to execute the write enable comm and. and, once this command is executed, it is valid unitl the write disable command is executed or the power is turned off. however, the read command is valid irre spective of write enable / diable command. input to sk after 6 clocks of this command is available by either 1 or 0, but be sure to input it. when the write enable command is executed after power on, write enable status gets in. when the write disable command is executed then, the ic gets in write disable status as same as at power on, and then the write command is canceled thereafter in software manner. however, the read command is executable. in write enable status, even when the write command is input by mistake, wr ite is started. to prevent such a mistake, it is recommended to execute the write disable command after completion of write. 5) erase cycle (erase) for the meaning of am,n,please see tables of command mode in page15. in this command, data of the designated address is ma de into 1. the data of the designated address becomes ffffh. actual erase starts at the fall of cs after the fall of a0 taken sk clock. in erase, status can be detected in the same manner as in write command. 6) erase all cycle (eral) for the meaning of n,please see tables of command mode in page15. in this command, data of all addresses is made into 1. data of all addresses becomes ffffh. actual erase starts at the fall of cs after the falll of the n-th clock from the start bit input. in eral, status can be detected in the same manner as in wral command. figure 38. write enable (wen) / disable (wds) cycle cs 1 2 1 1 1 4 high-z sk di do st atus t cs t sv busy t e/w ready a m a 3 a 2 a 1 n a 0 f igure 39. erase cycle cs 1 2 1 4 high-z sk di do st atus t cs t sv busy t e/w ready 1 n 0 0 0 f igure 40. erase all cycle cs 1 2 1 5 high-z 0 0 sk di do n 3 4 6 7 8 enable=1 1 disable=0 0 n: requir ed clocks am: msb of address n: required clocks n: required clocks downloaded from: http:/// 18/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 application 1)method to canc el each command read write,wral erase, eral *1 for the meaning of m,x, please see tables of command mode in page15 figure 41. read cancel available timing note 1) if vcc is made off in this area, designated address data is not guaranteed, therefore write once again is suggested. note 2) if cs is started at the same timing as that of the sk rise, write execution/cancel becomes unstable, therefore, it is recommended to fall in sk=low area. as for sk rise, recommend timing of t css /t csh or higher. figure 42. write, wral cancel available timing start bit pe code address ata 1bit 2bit m+1bit x+1bit cancel is available in all areas in read mode. ? method to cancel cancel by cs=low *1 a from start bit to the clock rise of d0 taken cancel by cs=low b the clock rise of d0 taken and after cancellation is not available by any means. c n+1 clock rise and after cancel by cs=low however, when write is started in b area (cs is ended), cancellation is not available by any means. and when sk clock is output continuously cancel function is not available. start bit pe code address ata t w a *1 1bit 2bit m+1bit x+1bit c b *1 for the meaning of m,n,x, please see tables of command mode in page15 *1 figure 43. erase, eral ca ncel available timing a from start bit to clock rise of a0 taken cancel by cs=low b clock rise of a0 taken cancellation is not available by any means. c n+1 clock rise and after cancel by cs=low however, when write is started in b area (cs is ended), cancellation is not available by any means. and when sk clock is output continuously cancel function is not available. note 1) if vcc is made off in this area, designated address data is not guaranteed, therefore write once again is suggested. note 2) if cs is started at the same timing as that of the sk rise, write execution/cancel becomes unstable, therefore, it is recommended to fall in sk=low area. as for sk rise, recommend timing of t css /t csh or higher. *1 for the meaning of m,n,please see tables of command mode in page15 clock rise of a0 taken sk di n-1 a1 n n+1 n+2 b c a enlarged figure a0 clock rise of d0 taken sk di n-1 d1 d0 n n+1 n+2 b enlarged figure c a a1 1bit 2bit m+1bit a c b start bit pe code address t w *1 downloaded from: http:/// 19/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 2) at standby when cs is low, even if sk,di,do are low,high or with middle electric potential, current does not over i sb1 max. 3) i/o peripheral circuit 3-1) pull down cs. by making cs=low at power on/off, mistake in operation and mistake write are prevented. pull down resistance rcs of cs pin to prevent mistake in operation and mist ake write at power on/off, cs pull down resistance is necessary. select an appropriate value to this resistance value from microcontroller v oh , i oh , and v il characteristics of this ic. 3-2) do is available in both pull up and pull down. do output always is high-z except in ready / busy status and data output in read command. malfunction may occur when high-z is input to the microcontr oller port connected to do, it is necessary to pull down and pull up do. when there is no influence upon the microcontroller operations, do may be open. if do is open, and at timing to output status ready, at timing of cs=high, sk=high, di=high, eeprom recognizes this as a start bit, resets ready output, and do =high-z, therefore, ready si gnal cannot be detected. to avoid such output, pull up do pin for improvement. figure 45. ready output timing at do=open figure 44. cs pull down resistance v ohm i ohm rcs ??? 2.4 2 10 -3 rcs 1.2 [k ] v ohm v ihe ??? rcs example) when vcc =5v, v ihe =2v, v ohm =2.4v, i ohm =2ma, from the equation , ? v ihe ? v ohm ? i ohm with the value of rpd to sa tisfy the above equation, v ohm becomes 2.4v or higher, and v ihe (=2.0v), the equation is also satisfied. : eeprom vih specifications : microcontroller v oh specifications : microcontroller i oh specifications microcontroller v ohm high output i ohm rcs v ihe low input eeprom cs sk di do d0 busy ready high-z enlarged cs sk di do busy high-z improvement by do pull up busy ready cs=sk=di=high when do=open cs=sk=di=high when do=pull up do high downloaded from: http:/// 20/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 pull up resistance rpu and pull down resistance rpd of do pin as for pull up and pull down resistance value, select an appropr iate value to this resistance value from microcontroller v ih , v il , and v oh , i oh , v ol , i ol characteristics of this ic. ready / busy status display (do terminal) this display outputs the internal status signal. when cs is started after t cs from cs fall after write command input, high or low is output. r/b display low (busy) = write under execution after the timer circuit in the ic works and creates the period of t e/w , this timer circuit completes automatically. and the memory cell is written in the period of t e/w , and during this period, other command is not accepted. r/b display = high (ready) = command wait status after t e/w (max.5ms) the following command is accepted. therefore, cs=high in the period of t e/w , and if signals are input in sk, di, malfunction may occur, therefore, di=low in the area cs=high. (especially, in the case of s hared input port, attention is required.) *do not input any command while status signal is output. command in put in busy area is cancelle d, but command input in ready ar ea is accepted. therefore, status ready output is cancelle d, and malfunction and mistake write may occur. figure 46. do pull up resistance rpu ??? 5 0.4 2.1 10 -3 rpu 2.2 [k ] v ole v ilm ??? rpu example) when vcc =5v , v ole =0.4v, i ole =2.1ma, v ilm =0.8v, from the equation , vcc v ole i ole with the value of rpu to satisfy the above equation, v ole becomes 0.4v or below, and with v ilm (=0.8v), the equation is also satisfied. rpd ??? 5 0.2 0.1 10 -3 rpd 48 [k ] v ohe v ihm ??? rpd example) when vcc =5v , v ohe =vcc 0.2v, i ohe =0.1ma, v ihm =vcc 0.7v from the equation , v ohe i ohe with the value of rpd to sa tisfy the above equation, v ohe becomes 2.4v or below, and with v ihm (=3.5v), the equation is also satisfied. figure 47. do pull down resistance do status do status figure 48. ready/busy status output timing chart : eeprom v ol specifications : eeprom i ol specifications : microcontroller v il specifications ? v ole ? i ole ? v ilm : eeprom v oh specifications : eeprom i oh specifications : microcontroller v ih specifications ? v ohe ? i ohe ? v ihm cs high-z sk di do clock write instruction ready status t sv busy t e/w microcontroller v ilm low input i ole v ole low output eeprom rpu microcontroller v ihm high input i ohe v ohe high output eeprom rpd downloaded from: http:/// 21/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 4) when to directly connect di and do this ic has independent input terminal di and output terminal do, and separate signals are handled on timing chart, meanwhile, by inserting a resistance r between these di and do terminals, it is possible to carry out control by 1 control line . data collision of microcontroller d i/o output and do output and feedback of do output to di input of eeprom. drive from the microcontroller di/o out put to di input of eeprom on i/o timing, and output signal from do output of eeprom occur at the same time in the following points. 4-1) 1 clock cycle to take in a0 address data at read command dummy bit 0 is output to do terminal. when address data a0 = 1 input, through current route occurs. 4-2) timing of cs = high after write command. do terminal in ready / busy function output. when the next start bit input is recognized, high-z gets in. especially, at command input after write, when cs in put is started with microcontroller di/o output low, ready output high is output from do terminal, and through current route occurs. feedback input at timing of these (4-1) and (4-2) does not cause disorder in basic operations, if resistance r is inserted. note) as for the case (4-2), attent ion must be paid to the following. when status ready is output, do and di are shared, di=high an d the microcontroller di/o=high-z or the microcontroller di/o=high ,if sk clock is input, do output is input to di and is recognized as a start bit, and malfunction may occur. as a method to avoid malfunctio n, at status ready output, set sk=low, or start cs within 4 cl ocks after high of ready signal is output. microcontroller di/o port di eeprom do r figure 49. di, do control line common connection figure 50. collision timing at read data output at di, do direct connection eeprom cs input eeprom sk input eeprom di input eeprom do output microcontroller di/o port write command microcontroller output busy busy ready ready ready collision of di input and do output hig h-z write command write command write command write command microcontroller input microcontroller output figure 51. collision timing at di, do direct connection figure.52 start bit input timing at di, do direct connection *1 *1 x=15,for the meaning of x , please see tables of command mode in page15. eeprom cs input eeprom sk input eeprom di input eeprom do output microcontroller di/o port a1 high-z collision of di input and do output high a0 0 dx dx-1 dx-2 a1 a0 high-z microcontroller output microcontroller input cs sk di do ready high-z start bit because di=high, set sk=low at cs rise. downloaded from: http:/// 22/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 selection of resistance value r the resistance r becomes through current limit resistance at data collision. when through current flows, noises of power source line and instantaneous stop of power source ma y occur. when allowable through current is defined as i, the following relation should be satisfied. determine allow able current amount in consideration of impedance and so forth of power source line in set. and insert resistance r, and set the value r to satisfy eeprom input level v ih /v il even under influence of voltage decline owing to leak current and so forth. insertion of r will not cause any influence upon basic operations. 4-3) address data a0 = 1 input, dummy bit 0 output timing (when microcontroller di/o output is high, eepr om do outputs low, and high is input to di) ? make the through current to eeprom 10ma or below. ? see to it that the level v ih of eeprom should satisfy the following. 4-4) do status ready output timing (when the microcontroller di/o is low, eeprom do output high, and low is input to di) ? set the eeprom input level v il so as to satisfy the following. figure 53. circuit at di, do direct connection (microcontroller di/o high output, eeprom low output) conditions v ihe i ohm r + v ole at this moment, if v ole =0v, v ihe i ohm r r ??? v ihe i ohm conditions v ile v ohe C i olm r as this moment, v ohe =vcc v ile vcc C i olm r r ??? vcc C v ile i olm figure 54. circuit at di, do direct connection (mi crocontroller di/o low out put, eeprom high output) example) when vcc=5v, v ohm =5v, i ohm =0.4ma, v olm =5v, i olm =0.4ma, from the equation , from the equation , r r v ihe i ohm 3.5 0.4 10 -3 r 8.75 [k ? ] ??? r r vcc C v ile i olm 5 C 1.5 2.1 10 -3 r 1.67 [k ? ] ??? therefore, from the equations and , r 8.75 [k ? ] : eeprom v ih specifications : eeprom v ol specifications : microcontroller i oh specifications ? v ihe ? v ole ? i ohm : eeprom v il specifications : eeprom v oh specifications : microcontroller i ol specifications ? v ile ? v ohe ? i olm microcontroller di/o port di eeprom do r high output i ohm v ohm v ole low output microcontroller di/o port di eeprom do r low output i olm v olm v ohe high output downloaded from: http:/// 23/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 5) i/o equivalence circuit 6)power-up/down conditions at power on/off, set cs low. when cs is high, this ic gets in input a ccept status (active). if power is turned on in this status, noises and the likes may cause malfunction, mistake write or so. to prevent these, at power on, set cs low. (when cs is in low status all inputs are cancelled.) and at power decline, owing to power line capaci ty and so forth, low power status may continue long. at this case too, owing to the same reason, malfunction, mistake write may occur, ther efore, at power off too, set cs low. por citcuit this ic has a por (power on reset) circuit as a mistake write countermeasure. after po r operation, it gets in write disable status. the por circuit is valid only when power is on, and does not work when power is off. however, if cs is high at power on/off, it may become write enable status owing to noises and the likes. for secure operations, observe the follwing conditions. 1. set cs=low 2. turn on power so as to satisfy the recommended conditions of t r , t off , vbot for por circuit operation. lvcc circuit lvcc (vcc-lockout) circuit prevents data rewrite oper ation at low power, and prevents wrong write. at lvcc voltage (typ.=1.2v) or below, it prevent data rewrite output circuit do oeint. figure 55. output circuit (do) figure 57. input circuit (di) figure 56. input circuit (cs) figure 58. input circuit (sk) vcc gnd vcc gnd vcc cs bad example good example figure 59. timing at power on/off figure 60. rise waveform diagram bad example cs pin is pulled up to vcc in this case, cs becomes high (active status), and eeprom may have malfunction, mistake write owing to noise and the likes. even when cs input is high-z, the status becomes like this case, which please note. good example it is low at power on/off. set 10ms or higher to recharge at power off. when power is turned on without observing this condition, ic internal circuit may not be reset, which please note. recommended conditions of t r , t off , vbot t off t r vbot 0 vcc t r t off vbot 10ms or below 10ms or higher 0.3v or below 100ms or below 10ms or higher 0.2v or below input citcuit cs csint. reset int. input circuit di cs int. input circuit sk cs int. downloaded from: http:/// 24/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 7)noise countermeasures vcc noise (bypass capacitor) when noise or surge gets in the power source line, malfuncti on may occur, therefore, fo r removing these, it is recommended to attach a by pass capacitor (0.1 f) between ic vcc and gnd, at that moment, attach it as close to ic as possible.and, it is also recommended to attach a bypass capacitor between board vcc and gnd. sk noise when the rise time of sk is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. to avoid this, a schmitt trigger circuit is built in sk input. the hysteresis width of this circuit is set about 0.2v, if noises exist at sk input, set the noise amplitude 0.2vp-p or below. and it is recommended to set the rise time of sk 100ns or below. in the case when the rise time is 100ns or higher, take sufficient noise countermeasures. make the clock rise, fall time as small as possible. downloaded from: http:/// 25/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 operational notes (1) described numeric values and data are design repres entative values, and the values are not guaranteed. (2) we believe that application circuit examples are recommendabl e, however, in actual use, confirm characteristics further sufficiently. in the case of use by changing the fixed number of ex ternal parts, make your decisi on with sufficient margin in consideration of static characteristics and transition characteristics and fluct uations of external parts and our lsi. (3) absolute maximum ratings if the absolute maximum ratings such as supply voltage and operating temperature and so forth are exceeded, lsi may be destructed. do not impress voltage and temperature exceed ing the absolute maximum ratings. in the case of fear exceeding the absolute maximum ratings, take physical safe ty countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to lsi. (4) gnd electric potential set the voltage of gnd terminal lowest at any operating condition. make sure that each terminal voltage is not lower than that of gnd terminal in consid eration of transition status. (5) heat design in consideration of allowable loss in actual use cond ition, carry out heat design with sufficient margin. (6) terminal to terminal short circuit and wrong packaging when to package lsi onto a board, pay su fficient attention to lsi direction and displacement. wrong packaging may destruct lsi. and in the case of pin short between lsi te rminals and terminals, terminals and power source, terminals and gnd owing to unconnect use, lsi may be destructed. (7) using this lsi in a strong electromagnetic field may cause malfunction, therefore, evaluate the design sufficiently. downloaded from: http:/// 26/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 part numbering b r 9 3 g 7 6 x x x 3 x x x bus type 93 microwire operating temperature / operating voltage -40 to +85 / 1.7v to 5.5v process code pin assignment blank: pin1~8: cs, sk, di, do, g nd, org, du, vcc respectively a : pin1~8: cs, sk, di, do, gnd, nc, du, vcc respectively b : pin1~8: du, vcc, cs, sk, di, do, gnd, nc respectively 76=8k capacity package blank :dip-t8 f :sop8 fj :sop-j8 fv :ssop-b8 fvt :tssop-b8 fvj :tssop-b8j fvm :msop8 nux :vson008x2030 packaging and fo r ming specification e2 : embossed tape and reel (sop8,sop-j8, ssop-b8,tssop-b8, tssop-b8j) tr : embossed tape and reel (msop8, vson008x2030) blank : tube (dip-t8) downloaded from: http:/// 27/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 physical dimensions tape and reel information ? order quantity needs to be multiple of the minimum quantity. 28/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 ? order quantity needs to be multiple of the minimum quantity. 29/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 ? order quantity needs to be multiple of the minimum quantity. 30/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 ? order quantity needs to be multiple of the minimum quantity. 31/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 direction of feed reel ? order quantity needs to be multiple of the minimum quantity. 32/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 direction of feed reel ? order quantity needs to be multiple of the minimum quantity. 33/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 direction of feed reel ? order quantity needs to be multiple of the minimum quantity. 34/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 ? order quantity needs to be multiple of the minimum quantity. 35/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 marking diagrams dip-t8 (top view) br93g76b part number marking lot number sop8(top view) part number marking lot number 1pin mark sop-j8(top view) part number marking lot number 1pin mark tssop-b8(top view) part number marking lot number 1pin mark tssop-b8j(top view) part number marking lot number 1pin mark ssop-b8(top view) part number marking lot numbe r 1pin mark vson008x2030 (top view) part number marking lot number 1pin mark msop8(top view) part number marking lot numbe r 1pin mark 9g76b 9g76b 9 g d b 9 g 76 b 9g7 9gd 9g7 6b3 6b3 b g 3 downloaded from: http:/// 36/36 datasheet datasheet br93g76-3b www.rohm.com tsz02201-09190g100090-1-2 07.jan.2013 rev.001 ? 2012 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 revision history date revision changes 07.jan.2013 001 new release downloaded from: http:/// datasheet d a t a s h e e t notice - ge rev.002 ? 2014 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. our products are designed and manufac tured for application in ordinary elec tronic equipments (such as av equipment, oa equipment, telecommunication equipment, home electroni c appliances, amusement equipment, etc.). if you intend to use our products in devices requiring ex tremely high reliability (such as medical equipment (note 1) , transport equipment, traffic equipment, aircraft/spacecra ft, nuclear power controllers, fuel c ontrollers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (specific applications), please consult with the rohm sale s representative in advance. unless otherwise agreed in writing by rohm in advance, rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ro hms products for specific applications. (note1) medical equipment classification of the specific applications japan usa eu china class class class b class class | class 2. rohm designs and manufactures its products subject to strict quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe desi gn against the physical injury, damage to any property, which a failure or malfunction of our products may cause. the following are examples of safety measures: [a] installation of protection circuits or other protective devices to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditio ns, as exemplified below. accordin gly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of an y rohms products under any special or extraordinary environments or conditions. if you intend to use our products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] use of our products in any types of liquid, incl uding water, oils, chemicals, and organic solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products ar e exposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed to static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing components, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (ev en if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subjec t to radiation-proof design. 5. please verify and confirm characteristics of the final or mounted products in using the products. 6. in particular, if a transient load (a large amount of load applied in a short per iod of time, such as pulse. is applied, confirmation of performance characteristics after on-boar d mounting is strongly recomm ended. avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading c ondition may negatively affect product performance and reliability. 7. de-rate power dissipation (pd) depending on ambient temper ature (ta). when used in seal ed area, confirm the actual ambient temperature. 8. confirm that operation temperat ure is within the specified range described in the product specification. 9. rohm shall not be in any way responsible or liable for fa ilure induced under deviant condi tion from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlori ne, bromine, etc.) flux is used, the resi due of flux may negatively affect product performance and reliability. 2. in principle, the reflow soldering method must be used; if flow soldering met hod is preferred, please consult with the rohm representative in advance. for details, please refer to rohm mounting specification downloaded from: http:/// datasheet d a t a s h e e t notice - ge rev.002 ? 2014 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, pl ease allow a sufficient margin considering variations of the characteristics of the products and external components, including transient characteri stics, as well as static characteristics. 2. you agree that application notes, re ference designs, and associated data and in formation contained in this document are presented only as guidance for products use. theref ore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take proper caution in your manufacturing process and storage so that voltage exceeding t he products maximum rating will not be applied to products. please take special care under dry condit ion (e.g. grounding of human body / equipment / solder iron, isolation from charged objects, se tting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriora te if the products are stor ed in the places where: [a] the products are exposed to sea winds or corros ive gases, including cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to di rect sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage c ondition, solderability of products out of recommended storage time period may be degraded. it is strongly recommended to confirm sol derability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the co rrect direction, which is indicated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use products within the specified time after opening a humidity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage time period. precaution for product label qr code printed on rohm products label is for rohms internal use only. precaution for disposition when disposing products please dispose them proper ly using an authorized industry waste company. precaution for foreign exchange and foreign trade act since our products might fall under cont rolled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with rohm representative in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to application example contained in this document is for reference only. rohm does not warrant that foregoi ng information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. rohm shall not be in any way responsible or liable for infringement of any intellectual property rights or ot her damages arising from use of such information or data.: 2. no license, expressly or implied, is granted hereby under any intellectual property rights or other rights of rohm or any third parties with respect to the information contained in this document. other precaution 1. this document may not be reprinted or reproduced, in whol e or in part, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any wa y whatsoever the products and the related technical information contained in the products or this document for any military purposes, incl uding but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties. downloaded from: http:/// datasheet datasheet notice C we rev.001 ? 2014 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. downloaded from: http:/// |
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